? semiconductor components industries, llc, 1999 november, 1999 rev. 0 1 publication order number: mac12sm/d
preferred device
silicon bidirectional thyristors designed for industrial and consumer applications for full wave control of ac loads such as appliance controls, heater controls, motor controls, and other power switching applications. ? sensitive gate allows triggering by microcontrollers and other logic circuits ? blocking voltage to 800 volts ? on-state current rating of 12 amperes rms at 70 c ? high surge current capability e 90 amperes ? rugged, economical to220ab package ? glass passivated junctions for reliability and uniformity ? minimum and maximum values of i gt , v gt and i h specified for ease of design ? high commutating di/dt e 8.0 a/ms minimum at 110 c ? immunity to dv/dt e 15 v/ m sec minimum at 110 c ? operational in three quadrants: q1, q2, and q3 ? device marking: logo, device type, e.g., mac12sm, date code maximum ratings (t j = 25 c unless otherwise noted) rating symbol value unit peak repetitive offstate voltage (1) (t j = 40 to 110 c, sine wave, 50 to 60 hz, gate open) mac12sm mac12sn v drm, v rrm 600 800 volts on-state rms current (all conduction angles; t c = 70 c) i t(rms) 12 amps peak non-repetitive surge current (one full cycle sine wave, 60 hz, t j = 110 c) i tsm 90 amps circuit fusing consideration (t = 8.33 ms) i 2 t 33 a 2 sec peak gate power (pulse width = 1.0 m sec, t c = 70 c) p gm 16 watts average gate power (t = 8.3 msec, t c = 70 c) p g(av) 0.35 watt operating junction temperature range t j 40 to 110 c storage temperature range t stg 40 to 150 c (1) v drm and v rrm for all types can be applied on a continuous basis. blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded. triacs 12 amperes rms 600 thru 800 volts preferred devices are recommended choices for future use and best overall value. device package shipping ordering information mac12sm to220ab 50 units/rail mac12sn to220ab to220ab case 221a style 4 1 2 3 4 pin assignment 1 2 3 gate main terminal 1 main terminal 2 4 main terminal 2 http://onsemi.com 50 units/rail mt1 g mt2
mac12sm, mac12sn http://onsemi.com 2 thermal characteristics characteristic symbol value unit thermal resistance e junction to case e junction to ambient r q jc r q ja 2.2 62.5 c/w maximum lead temperature for soldering purposes 1/8 from case for 10 seconds t l 260 c electrical characteristics (t j = 25 c unless otherwise noted; electricals apply in both directions) characteristic symbol min typ max unit off characteristics peak repetitive blocking current (v d = rated v drm , v rrm ; gate open) t j = 25 c t j = 110 c i drm , i rrm e e e e 0.01 2.0 ma on characteristics peak on-state voltage (1) (i tm = 17 a) v tm e e 1.85 v gate trigger current (continuous dc) (v d = 12 v, r l = 100 w ) mt2(+), g(+) mt2(+), g() mt2(), g() i gt 0.8 0.8 0.8 1.5 2.5 2.7 5.0 5.0 5.0 ma holding current (v d = 12 v, gate open, initiating current = 200 ma) i h 1.0 2.5 10 ma latching current (v d = 12 v, i g = 5 ma) mt2(+), g(+) mt2(+), g() mt2(), g() i l 2.0 2.0 2.0 3.0 5.0 3.0 15 20 15 ma gate trigger voltage (continuous dc) (v d = 12 v, r l = 100 w ) mt2(+), g(+) mt2(+), g() mt2(), g() v gt 0.45 0.45 0.45 0.68 0.62 0.67 1.5 1.5 1.5 v dynamic characteristics critical rate of change of commutating current (v d = 400 v, i tm = 3.5 a, commutating dv/dt = 10 v/ m s, gate open, t j = 110 c, f = 500 hz, snubber: cs = 0.01 m f, rs = 15 w ) (di/dt) c 8.0 10 e a/ms critical rate of rise of off-state voltage (v d = 67% v drm , exponential waveform, r gk = 1 k w , t j = 110 c) dv/dt 15 40 e v/ m s repetitive critical rate of rise of on-state current ipk = 50 a; pw = 40 m sec; dig/dt = 1 a/ m sec; igt = 100 ma; f = 60 hz di/dt e e 10 a/ m s (1) pulse test: pulse width 2.0 ms, duty cycle 2%.
mac12sm, mac12sn http://onsemi.com 3 + current + voltage v tm i h symbol parameter v drm peak repetitive forward off state voltage i drm peak forward blocking current v rrm peak repetitive reverse off state voltage i rrm peak reverse blocking current voltage current characteristic of triacs (bidirectional device) i drm at v drm on state off state i rrm at v rrm quadrant 1 mainterminal 2 + quadrant 3 mainterminal 2 v tm i h v tm maximum on state voltage i h holding current mt1 (+) i gt gate (+) mt2 ref mt1 () i gt gate (+) mt2 ref mt1 (+) i gt gate () mt2 ref mt1 () i gt gate () mt2 ref mt2 negative (negative half cycle) mt2 positive (positive half cycle) + quadrant iii quadrant iv quadrant ii quadrant i quadrant definitions for a triac i gt + i gt all polarities are referenced to mt1. with inphase signals (using standard ac lines) quadrants i and iii are used.
mac12sm, mac12sn http://onsemi.com 4 180 dc q2 q1 30 t j , junction temperature ( c) figure 1. typical gate trigger current versus junction temperature t j , junction temperature ( c) i gt , gate trigger current (ma) v gt , gate trigger voltage (volts) 40 10 20 50 80 110 100 1 0.85 0.40 q3 figure 2. typical gate trigger voltage versus junction temperature , latching current (ma) t j , junction temperature ( c) , holding current (ma) t j , junction temperature ( c) figure 3. typical latching current versus junction temperature figure 4. typical holding current versus junction temperature 25 5 35 65 95 10 100 1 10 100 0.1 10 40 10 20 50 80 110 25 5 35 65 95 40 10 20 50 80 110 25 5 35 65 95 0.50 0.60 0.70 0.75 0.80 40 10 20 50 80 110 25 5 35 65 95 figure 5. typical rms current derating i t(rms) , rms on-state current (amps) 110 90 80 70 8 6 4 2 0 t c , case temperature ( c) figure 6. on-state power dissipation i t(av) , average on-state current (amps) 12 8 6 2 0 20 15 5 10 p (av) , average power dissipation (watts) 0 60 25 i h mt2 positive mt2 negative q2 q1 i l q3 q2 q1 12 10 30 , 60 90 180 dc 120 0.90 10 4 0.1 0.45 0.55 0.65 q3 0.1 1 100 90 60
mac12sm, mac12sn http://onsemi.com 5 figure 7. typical on-state characteristics v t , instantaneous on-state voltage (volts) 100 0.5 i t , instantaneous on-state current (amps) 1.5 2.5 3.5 4.5 10 1 0.1 figure 8. typical thermal response t, time (ms) r(t), transient thermal resistance (normalized) 1 0.1 0.01 10000 1000 100 10 1 0.1 maximum @ t j = 110 c typical @ t j = 25 c maximum @ t j = 25 c
mac12sm, mac12sn http://onsemi.com 6 package dimensions style 4: pin 1. main terminal 1 2. main terminal 2 3. gate 4. main terminal 2 notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. 3. dimension z defines a zone where all body and lead irregularities are allowed. dim min max min max millimeters inches a 0.570 0.620 14.48 15.75 b 0.380 0.405 9.66 10.28 c 0.160 0.190 4.07 4.82 d 0.025 0.035 0.64 0.88 f 0.142 0.147 3.61 3.73 g 0.095 0.105 2.42 2.66 h 0.110 0.155 2.80 3.93 j 0.018 0.025 0.46 0.64 k 0.500 0.562 12.70 14.27 l 0.045 0.060 1.15 1.52 n 0.190 0.210 4.83 5.33 q 0.100 0.120 2.54 3.04 r 0.080 0.110 2.04 2.79 s 0.045 0.055 1.15 1.39 t 0.235 0.255 5.97 6.47 u 0.000 0.050 0.00 1.27 v 0.045 1.15 z 0.080 2.04 q h z l v g n a k 123 4 d seating plane t c s t u r j to220ab case 221a09 issue z
mac12sm, mac12sn http://onsemi.com 7 notes
mac12sm, mac12sn http://onsemi.com 8 on semiconductor and are trademarks of semiconductor components industries, llc (scillc). scillc reserves the right to make changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. atypicalo parameters which may be provided in scill c data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. all operating parameters, including atypicalso must be validated for each customer application by customer's technical experts. scillc does not convey any license under its patent r ights nor the rights of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgical implant into t he body, or other applications intended to support or sustain life, or for any other application in which the failure of the scillc product could create a sit uation where personal injury or death may occur. should buyer purchase or use scillc products for any such unintended or unauthorized application, buyer shall indemnify and hold scillc and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that scillc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employer. publication ordering information central/south america: spanish phone : 3033087143 (monfri 8:00am to 5:00pm mst) email : onlitspanish@hibbertco.com asia/pacific : ldc for on semiconductor asia support phone : 3036752121 (tuefri 9:00am to 1:00pm, hong kong time) toll free from hong kong & singapore: 00180044223781 email : onlitasia@hibbertco.com japan : on semiconductor, japan customer focus center 4321 nishigotanda, shinagawaku, tokyo, japan 1418549 phone : 81357402745 email : r14525@onsemi.com on semiconductor website : http://onsemi.com for additional information, please contact your local sales representative. mac12sm/d north america literature fulfillment : literature distribution center for on semiconductor p.o. box 5163, denver, colorado 80217 usa phone : 3036752175 or 8003443860 toll free usa/canada fax : 3036752176 or 8003443867 toll free usa/canada email : onlit@hibbertco.com fax response line: 3036752167 or 8003443810 toll free usa/canada n. american technical support : 8002829855 toll free usa/canada europe: ldc for on semiconductor european support german phone : (+1) 3033087140 (mf 1:00pm to 5:00pm munich time) email : onlitgerman@hibbertco.com french phone : (+1) 3033087141 (mf 1:00pm to 5:00pm toulouse time) email : onlitfrench@hibbertco.com english phone : (+1) 3033087142 (mf 12:00pm to 5:00pm uk time) email : onlit@hibbertco.com european tollfree access*: 0080044223781 *available from germany, france, italy, england, ireland
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